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  voidless-hermetically sealed fast recovery glass rectifiers microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2008 6-11-2008 rev c www. microsemi . com scottsdale division 1n5186 thru 1N5190 1n5186 thru 1N5190 description appearance this ?fast recovery? rectifier diode series is military qualifie d to mil-prf-19500/424 and is ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal ?category i? metallurgical bond. these devices are also available in surface mount melf package configurations by adding a ?us? suffix. microsemi also offers numerous othe r rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both thro ugh-hole and surface mount packages. packa g e e important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? popular jedec registered 1n5186 to 1N5190 series ? voidless hermetically sealed glass package ? triple-layer passivation ? internal ? category i? metallurgical bonds ? working peak reverse voltage 100 to 600 volts. ? jan, jantx, and jantxv available per mil-prf- 19500/424 ? surface mount equivalents also available in a square end-cap melf configuration with ?us? suffix ? fast recovery 3 amp rectifiers 100 to 600 v ? military and other high-reliability applications ? general rectifier applicat ions including bridges, half-bridges, catch diodes, etc. ? high forward surge current capability ? extremely robust construction ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction & storage temperature: -65 o c to +175 o c ? thermal resistance: 20 o c/w junction to lead at 3/8 inch (10 mm) lead length from body ? thermal impedance: 1.5 o c/w @ 10 ms heating time ? average rectified forward current (i o ): 3.0 amps @ t a = 25oc and 0.700 amps at t a = 150oc ? forward surge current: 80 amps @ 8.3 ms half-sine ? solder temperatures: 260oc for 10 s (maximum) ? case: hermetically se aled voidless hard glass with tungsten slugs ? terminations: axial-leads are tin/lead (sn/pb) over copper ? marking: body paint and part number, etc. ? polarity: cathode band ? tape & reel option: standard per eia-296 ? weight: 750 mg ? see package dimensions on last page electrical characteristics working peak reverse voltage v rwm minimum breakdown voltage v br @ 50 a forward voltage v f @ 9a (pulsed) maximum reverse current i r @ v rwm maximum reverse recovery time t rr average rectified current amps i o 25 o c 100 o c 25 o c 150 o c type volts volts min volts max volts a a ns amps amps 1n5186 1n5187 1n5188 1n5189 1N5190 100v 200v 400v 500v 600v 120v 240v 480v 550v 660v 0.9v 1.5v 2.0 100 150 200 250 300 400 3.0 3.0 3.0 3.0 3.0 0.7 0.7 0.7 0.7 0.7
voidless-hermetically sealed fast recovery glass rectifiers www. microsemi . com scottsdale division 1n5186 thru 1N5190 1n5186 thru 1N5190 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage curre nt that will flow at the specified voltage and temperature. t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified decay point after a peak reverse current occurs. package dimensions lead tolerance = + .002 -.003 in *includes sections of the lead or fillet over which the lead diameter is uncontrolled. microsemi scottsdale division page 2 copyright ? 2008 6-11-2008 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503


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